Applications of Bismuth‐Containing III–V Semiconductors in Devices

Bi‐containing III–V semiconductors such as GaAs
_1−x
Bi
_x
and related semiconductors allow high flexibility in bandgap engineering and the modification of the band structure, resulting in materials with a temperature‐insensitive bandgap or a large energy difference between the valence band and the split‐off band. Conventionally, it has been considered difficult to fabricate group III–V semiconductors containing Bi, but recently it has become possible to obtain high‐quality GaAs
_1−x
Bi
_x
and related semiconductors. The realization of GaAs
_1−x
Bi
_x
and GaSb
_1−x
Bi
_x
laser diodes indicates the potential of Bi‐containing III–V semiconductors. This chapter outlines recent results on laser diodes, solar cells, terahertz detectors, and photodetectors consisting of bismuth‐containing III–V semiconductors.