Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy

Ferromagnet/semiconductor heterostructures and nanostructures are attractive as artificial materials for “semiconductor spintronics,” because they have magnetic and/or spin‐related functions, as well as excellent compatibility with semiconductor device structures. We review our studies on the molecular beam epitaxy (MBE) growth of ferromagnet (MnAs)/semiconductor(GaAs, Si) layered heterostructures and nanoscale granular structures, and their magnetic, magneto‐transport properties, and device applications. We show that, by careful control of MBE growth and processing, some useful magnetic or spin‐related functions can be realized at room temperature.