Migration‐Enhanced Epitaxy and its Application

The fundamental characteristics of migration‐enhanced epitaxy (MEE), one of the modified molecular beam epitaxy (MBE) methods, and its application to area selective epitaxy are described. By repeating the commensurate deposition, MEE produces atomically flat surfaces and interfaces in GaAs and other III–V compound semiconductors. Although an exact control of the number of Ga atoms in one MEE cycle is not possible, the resulting roughness of grown surfaces is shown to be one monolayer thick at most, regardless of the deposition rate. The MEE deposition sequence has proved useful for area selective epitaxy. Uniform and well‐defined microstructures have been grown at optional positions. Quantum dots have also been fabricated by combining MEE with the self‐assembled growth method.