Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices

We review the developments in the growth by molecular‐beam epitaxy (MBE) of III–Sb compound semiconductors and heterostructures for optoelectronic device applications. After discussing the peculiarities of antimonides and their potential for optoelectronic applications, we give a brief historical survey of their epitaxial growth. Then we review the progress in the MBE growth of III–Sb materials from MBE system evolutions to alloy, doping, and interface control, and metamorphic growth on Si substrates, insisting particularly on recent achievements. The objective of this chapter is to provide useful information and references to readers who are not familiar with the MBE of antimonide compounds and heterostructures.