Performance Comparison of Modern Devices

This chapter discusses the performance of cross‐current tetrode silicon‐on‐insulator complementary metal oxide semiconductors (XCT‐SOI CMOSs) based on the partially depleted silicon‐on insulator metal oxide‐semiconductor field‐effect transistor (SOI MOSFET). In order to understand comprehensively the position of XCT‐SOI CMOS, the chapter presents a summary of the expected switching performance of various devices based on the International Technology Roadmap for Semiconductors (ITRS) of 2011. Switching performance estimation assumed that the gate‐induced drain leakage (GIDL) current of the SOI CMOS is well suppressed in the “OFF” state. Although the tunnel barrier junction (TBJ) MOSFET offers fairly low energy, the switching delay time appears to be sensitive to the material of source and drain electrodes. It is anticipated that the tunneling dielectric thin‐film transistor (TDTFT) will also show behavior similar to the TBJ MOSFET. In contrast, the gate‐all‐around (GAA) wire MOSFET is superior to the others in terms of switching speed, but not in terms of switching energy.