Physics‐Based Model for TBJ‐MOSFETs and High‐Frequency Performance Prospects

This chapter describes the simulated characteristics of a new device structure, the tunneling‐barrier junction metal oxide semiconductor field‐effect transistor (TBJ MOSFET) with a silicon‐on‐insulator (SOI) substrate, as a candidate for the ultimate device structure. This device uses the direct tunneling currents both at source and drain junctions. At large scales, the TBJ MOSFET offers less drivability than conventional devices because of its large parasitic tunneling resistance. At extremely small scales, however, its tunneling resistance falls dramatically, which increases its drivability.