Magnetic Back‐End Technology

This chapter provides an overview of the concerns for adaptation of magnetoresistive random‐access memory (MRAM) in a complementary metal–oxide semiconductor (CMOS) fabrication facility. Recent years have seen field‐MRAM entrenched as a realistic technology for high‐reliability commercial and aerospace use. Thermal‐assisted MRAM's simplified operation and spin‐transfer torque MRAM's impressive scaling outlook bode well for future high‐volume implementation of MRAM technology in the marketplace. The robustness and simplicity of MRAM structures combined with all‐round desirable operating characteristics promise to make MRAM a part of the large history of magnetic memory success
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