Atomistic simulations of si, ge and iii-v nanowire mosfets

Si nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-all-around (GAA) architecture are expected to be a key device technology for future integrated circuits, because of excellent short-channel effect immunity, possible elimination of channel doping, which gives origin to characteristic fluctuation, feasibility of vertical integration, and so on. This chapter describes atomistic approaches to simulate carrier transport in Si, Ge and III-VNW MOSFETs with GAA structure, and discusses their performance potentials by performing intercomparison. It addresses this subject and investigates the electron mobility of SiNWs with three crystalline orientations-< 100>, <110 > and <111 >-by considering the atomistic electron-phonon interactions. The chapter shows that the electron mobility of SiNWs strongly depends on the crystalline orientation and diameter, and its origin is discussed in terms of electron and phonon band structure modulation caused by the quantum confinement. It evaluates performance potentials of InAsNW MOSFETs under the ballistic transport, and compare them with those of SiNW MOSFETs.