Devices for the Post CMOS Era

This chapter addresses the end of conventional device scaling and discusses post Si device alternatives. A short discussion of requirements for a successful logic device is followed by a discussion of the traditional device evolution path for the conventional FET geometry. Multiple gate devices and high mobility channel materials are included in this section. Next the tunnel FETs is considered as an alternative switch that requires no new materials. The discussion of new device materials includes carbon nano tubes, graphene, ferroelectric dielectrics and magnetic switching as possible candidates for new switches. The chapter ends with a brief outlook on what challenges have to be overcome to make these new materials viable candidates for a logic technology.