Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET

This chapter demonstrates some interesting attributes of the ultra-thin dynamic threshold (DT) MOSFET. It is shown that the bipolar action is suppressed or enhanced by the gate following the mechanism of Lubistor operation. This chapter considers the experimental results in addressing the channel-polarity dependence of the bipolar action of the ultra-thin-body DT-MOSFET and demonstrates the potential of the ultra-thin SOI DT-MOS from the point of view of application to 1-V operation circuits. As a result, it is strongly suggested that we can expect to realize a DT-MOSFET suitable for low-power and low-noise circuit applications. [©2007 IEEE. Reprinted, with permission, from Y. Omura and T. Tochio, Gate-Controlled Bipolar Action in Ultrathin-Body Dynamic-Threshold SOI MOSFET, Proceedings of IEEE International SOI Conference, Indian Wells, October 2007, pp. 63-64. ©2008 IEEE. Reprinted, with permission, from T. Tochio and Y. Omura, Transport Aspects and Comparison of n-Channel and p-Channel Ultra-Thin-Body Dynamic-Threshold MOSFETs, Digest of IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK2008), pp. 53-54.]