Experimental Consideration for Modeling of Lubistor Operation

An experimental characterization of Lubistors has been carried out through the employment of SIMOX technology and the following results were obtained: (i) An oxygen-doped silicon (ODS) layer should be placed between the upper silicon layer and buried oxide layer to achieve the original Lubistor characteristic; that is, anode-to-cathode current is cut off by enhancement-mode gate bias.(ii) In the Lubistor's ON state, a large potential drop exists only near a high-low junction terminal, which must be supported by the depletion layer. (iii) In the Lubistor's OFF state, a large potential drop exists near a pn-junction terminal, which must also be supported by the depletion layer. A simplified analysis is carried out to clarify the Lubistor's operation mechanism. A theoretical model is used to qualitatively support experimental results.