Silicononinsulator Technology for HighTemperature Metal Oxide Semiconductor Devices and Circuits

The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-an-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 °C.