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A Subthreshold-MOSFETs-Based Scattered Relative Temperature Sensor Front-End With a Non-Calibrated \pm 2.5^{\circ}{\rm C} 3\sigma Relative Inaccuracy From - 40^{\circ}{\rm C} to 100 ^{\circ}{\rm C}

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4 Author(s)
Li Lu ; Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA ; Vosooghi, B. ; Jinghong Chen ; Changzhi Li

This paper presents a subthreshold MOSFETs-based scattered relative temperature sensor front-end operating at a low supply voltage. Dynamic element matching and dynamic offset cancellation have been implemented to minimize the errors induced by device mismatches. An individual proportional-to-absolute-temperature (PTAT) voltage generator was first implemented to verify the low voltage operation capability and the mismatch-error correction. A low voltage reference circuit has been also designed and tested. A gate-bulk-driven error correction amplifier is proposed in order to minimize the offset error and maintain low voltage operation. The scattered relative temperature sensor front-end was then implemented in AMI 0.5 μm CMOS process with an array of 5 × 5 sensor nodes across the chip. The minimum supply voltage was measured as 1 V over -40-100°C with a typical N-JP-type threshold voltage of around 0.8 V and 0.9 V at room temperature, respectively. The measured relative inaccuracy was less than ±2.5°C without calibration. To the best of the authors' knowledge, this is the first time that non-calibrated on-chip relative temperature monitoring accuracy is reported. Furthermore, the multi-location thermal monitoring function has been experimentally demonstrated and a 2°C/mm on-chip temperature gradient was detected.

Published in:

Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:60 ,  Issue: 5 )