Magnetoresistance and thermopower of ultrafine bismuth nanowire arrays

We report electronic transport measurements of arrays of bismuth nanowires with diameters of 30 and 200 nm over a wide range of temperatures (2.0 to 300 K) and magnetic fields (-9 to 9 T). An arrangement of separate contacts for voltage and current is used. The magnetic field causes a Hall voltage to appear together with the magnetoresistance. Hall voltage can be separated from the magnetoresistance using D C techniques and magnetic field reversal. The main result is a sharp peak of the longitudinal (B//I) magnetoresistance for B=O.