Preparation of Ir-based thin film electrodes by MOCVD

Ir and IrO/sub 2/ thin films were successfully prepared on SiO/sub 2//Si at 275-450/spl deg/C by metalorganic chemical vapor deposition (MOCVD) using a new Ir precursor, Ir(MeCp)(cod) and oxygen. In our MOCVD system, a conventional bubbling method was used, because this precursor is liquid and has a comparatively high vapor pressure. The obtained Ir films had mirror like surfaces (rms roughness : 1.4-20 /spl mu/m) and low resistivity of 23-90 /spl mu/Q/spl middot/cm. These values are similar to those of the sputtered-Ir film prepared at 530/spl deg/C. MOCVD-Ir films showed good step coverage of 70-80%. PZT capacitors with an MOCVD-Ir bottom electrode showed good ferroelectric properties.