A comparison of bulk and SOI deep sub-micron MOSFET small-signal behavior in the high-frequency regime beyond 10 GHz

We investigate the small-signal behavior of SOI CMOS devices. The small signal parameters include: power gain, transconductance, input resistance, output resistance, input and output capacitance. These characteristics were compared to bulk CMOS at RF frequencies above 10 GHz. Analysis of these results, show a great reduction in the negative impacts of both the parasitic S/D resistance and parasitic BJT floating-body effects on RF circuits at the 10 GHz regime.