Resonant Polysilicon Antenna for Terahertz Detection

Resonant antennas have garnered considerable interest in terahertz and visible regimes owing to its extraordinary localized field concentration capability. In this work, we experimentally demonstrate a novel metal-free terahertz detector, which is fashioned by heavily doped polysilicon using standard CMOS process. The computational results show that the incident field can be largely enhanced within the antenna gap area at the resonance of 650 GHz. The room temperature measured results show that the responsivity and noise equivalence power of the detector integrated with the optimized antenna design is 600 V/W and 200 pW/Hz
^0.5
at 650 GHz, respectively. Aided by an equivalent circuit model, theoretical analysis is carried out to elucidate that the field enhancement ratio of the resonant polysilicon antenna is comparable to gold made antenna at terahertz frequencies. Our study provides a new approach for designing a low-cost and CMOS-compatible terahertz detector characterized with strongly localized field, projecting more insights on light-matter interaction at terahertz frequencies.