Low-Crosstalk Silicon Nitride Arrayed Waveguide Grating for the 800-nm Band

We present a silicon nitride (Si
_x
N
_y
) arrayed waveguide grating (AWG). Crosstalk in this AWG was reduced by decreasing the phase error in a multimode arrayed waveguide (WG) at center wavelength of 838 nm. 8-channel Si
_x
N
_y
AWGs using arrayed WGs with double-etched inverse-tapered WG structure and cross-sectional area of 1.5 × 1.5 μm
²
were fabricated. The AWG exhibited less than -29.6-dB crosstalk with 0.43-dB insertion loss for transverse electric (TE) polarization.