Compact W-band solid-state MMIC high power sources

Presented is the development of two >2 W W-band solid-state monolithic microwave integrated circuit (MMIC) power amplifier modules using TRW's advanced GaAs- and InP-based HEMT MMICs. The GaAs HEMT at version delivers a record power of 2.4 W at 8.2% power-added efficiency with an associated gain of 12 dB at CW condition. The InP HEMT version delivers a compatible power of 2.24 W at 9.9% PAE with much higher associated gain of 19.5 dB. These are the highest recorded W-band power module using solid-state MMIC technology. The measured results clearly show that InP HEMT technology, though operating at a lower drain voltage (2.5-3 V) than GaAs HEMT device (typically 3.5-4 V), offers a better power-efficiency combination at much higher associated gain than its GaAs counterpart at millimeter-wave frequency. The overall module only weighs 10 oz. in a volume of <4 in/sup 3/. This is the smallest 2.4-watt W-band highpower module to date.