Performance Improvement of UV Light-Emitting Diodes With Triangular Quantum Barriers

Triangular quantum barriers have been designed and investigated in this work to improve the performances of AlGaN-based ultraviolet light-emitting diodes (UV-LEDs). The results show that the designed LED with triangular quantum barriers has been enhanced by 63.6% in light output power, while the efficiency droop has been reduced to 14.8% at an injection current of 180 mA, compared with the conventional LED with a stationary component Al
_0.15
Ga
_0.85
N barriers. Further research shows that the improvements of the proposed structure are due to the enhanced hole injection efficiency and the suppressed electron overflow as well as the decreased electrostatic field in the active region.