3-D Multilayer S-Bend Silicon Waveguide Optical Interconnect

A 3-D S-bend silicon waveguide optical interconnect on silicon on insulator is proposed to connect optical circuits in a multilayered photonic-integrated circuit (PIC). Critical parameters like bending loss, axial shift, and coupling loss are calculated for efficient implementation in the dense wavelength division multiplexing wavelength spectrum (1.46-1.62 μm). The critical parameters for tight bends are kept in control by optimizing geometrical parameters for application in miniaturized optical circuits in multilayered PIC. Possibility of fabrication of proposed complex interconnect is also explored.