Highly Photoconductive Si Film Formed by Blue Laser Diode Annealing for System on Panel

Highly photosensitive Si film of new structure was successfully fabricated using semiconductor blue laser diode annealing (BLDA). By adopting back-reflection layer, simulation results show 86% increase of light absorption in red or IR region. Peaks from XRD results showed that Si film was crystallized clearly after BLDA in spite of the new back-reflection layer of Ti. All the process for photoconductive film was conducted using r.f. sputtering and vacuum evaporation without adopting CVD. After H
₂
annealing, photoconductivity for the patterned Si films of 50 nm thickness increased remarkably up from 1.2 ×10
^-4
to 3.2 ×10
^-1
S/cm under white light of 100 mW/cm
²
. Adopting back-reflection layer under the crystallized Si film using BLDA is promising to integrate functional photosensors with TFTs on panel.