A 0.3 V 10-bit 1.17 f SAR ADC With Merge and Split Switching in 90 nm CMOS

This paper presents a 10-bit ultra-low voltage energy-efficient SAR ADC. The proposed merge-and-split (MS) switching effectively reduces DAC switching energy by 83% compared with conventional one without the need of extra reference voltage (Vcm) and the issue of common-mode voltage variation. To maintain good input linearity, a new double-bootstrapped sample-and-hold (S/H) circuit is proposed under an ultra-low voltage of 0.3 V. In addition, by employing asymmetric logic in SAR control, the leakage power is reduced with the penalty of slight conversion speed degradation. The test chip fabricated in 90 nm CMOS occupied a core area of 0.03 mm
²
. With a single 0.3 V supply and a Nyquist rate input, the prototype consumes 35 nW at 90 kS/s and achieves an ENOB of 8.38 bit and a SFDR of 78.2 dB, respectively. The operation frequency is scalable up to 2 MS/s and power supply range from 0.3 V to 0.5 V. The resultant FOMs are 1.17-to-1.78 fJ/conv.-step.