Analysis of contacts configurations of HEMT with ID-VDS curve measurments

The characteristic of I
_D-
V
_DS
curve is related by applying voltages to Schottky gate in AlGaN/GaN HEMTs. The measurement of drain and source resistances shown that the current increase was caused by inducing the 2DEG charge between drain and source electrodes. In this study, we evaporate different configurations of contacts to analyze its I
_D
-V
_DS
characteristics.