Dielectric materials for advanced VLSI and ULSI technologies

Advancements in very-large-scale integration (VISI) and ultra-large-scale integration (ULSI) of semiconductor devices result in complex, multilevel interconnect schemes and increased dependence on dielectric materials. These material systems (how the various materials in an integrated circuit [IC] are united together) are used in a variety of thin-film applications, such as insulators, ion implanting, and pattern-etch masking, as well as in final device passivation. For such applications, thin films must exhibit good mechanical, chemical, and electrical properties that are compatible with IC processing schemes. Thin films must also meet ease-of-manufacturing requirements. These stringent demands require a clear understanding of the material systems used in advanced technologies. Therefore, dielectric materials are selected according to applications, deposition process and hardware, film properties, and device integration. Thin-film deposition techniques, including plasma-enhanced, low-pressure thermal, electron-cyclotron-resonance chemical vapor, and spin-on are presented. Emerging deposition processes and new dielectrics are also discussed.