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In this letter, we present a new method to reduce crosstalk of carbon nanotube (CNT)-based VLSI interconnects. For this, proper integration of semiconducting CNTs (s-CNTs) and a new contact geometry, where metallic CNTs are in the core and s-CNTs are in the periphery of the CNT bundle, is proposed. The coupling capacitance between adjacent interconnects is modeled and compared with and without s-CNTs in the CNT bundle periphery. SPICE analysis and EM simulations are carried out which show that the coupling capacitance can be reduced by 82.5% and the resulting delay by 8.41%. We suggest that the crosstalk effect between neighboring wires can be reduced by using s-CNTs in the design.