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Electron-Field-Emission Properties of Gallium Compound by Ammonification of Ga 2O _{3} Nanowires

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4 Author(s)
Han-Ting Hsueh ; National Nano Devices Laboratories , Tainan, Taiwan ; Wen-Yin Weng ; Tsung-Ying Tsai ; Shoou-Jinn Chang

The authors report the growth of β-Ga2O3 nanowires and the conversion of β-Ga2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900°C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950°C, the threshold field drastically increased to 13.13 V/μm.

Published in:

IEEE Transactions on Nanotechnology  (Volume:12 ,  Issue: 5 )