Electron-Field-Emission Properties of Gallium Compound by Ammonification of Ga 2O$_{3}$ Nanowires

The authors report the growth of β-Ga
₂
O
₃
nanowires and the conversion of β-Ga
₂
O
₃
nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga
₂
O
₃
nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900°C, the threshold fields became smaller which were 3.82, 3.03 and 2.12 V/μm, respectively. While the ammonification temperature was increased to 950°C, the threshold field drastically increased to 13.13 V/μm.