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We propose a method to evaluate the electrical properties of nanoscale layered materials. This study is important for the potential application of these structures in light emitting diode electrodes. For this purpose we measure the reflection coefficient of a microwave signal recorded by a near-field Scanning Microwave Microscope. This method allows the non-contact measurement of the sheet resistance of the material under analysis. It provides detailed maps of the electrical properties of a micrometric area under test to assay its uniformity. In particular, we have applied this technique to a multilayer material composed by an Indium-Tin-Oxide film and few layer graphene.