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Porous silicon techniques for SOI structures

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1 Author(s)
Tsao, S.S. ; Sandia Nat. Labs., Albuquerque, NM, USA

Among the most promising techniques for producing silicon-on-insu-lator (SOI) substrates suitable for fabrication of high-performance devices are those based on the oxidation of porous silicon. Porous silicon has a unique set of material properties, which lends itself to a variety of different SOI fabrication techniques.

Published in:

Circuits and Devices Magazine, IEEE  (Volume:3 ,  Issue: 6 )