Silicon RF GCMOS performance for portable communications applications

A submicron silicon Radio Frequency Graded Channel MOS (RFGCMOS) technology has been developed for portable communications applications. A 12 mm device at 900 MHz has +29 dBm output power with 12 dB gain and 78% power added efficiency (PAE) at a drain to source voltage of 3.4 V, and drain to source quiescent current of 150 mA. A 256 /spl mu/m device at 900 MHz has 18.9 dB of small signal gain and an associated noise figure of 1.1 dB at VDS=3.0 volts and IDS=2 mA.