Low Power Operation of Resistive Switching Memory Device Using Novel W/Ge0.4Se0.6/Cu/Al Structure

Bipolar resistive switching memory device with a low power operation (200 muA/1.3 V) in a W/Ge
_0.4
Se
_0.6
/Cu/Al structure has been investigated. A stronger Cu chain formation can be observed by monitoring both the erase voltage and current. The low resistance state (R
_Low
) decreases with increasing the programming current from InA to 500 muA, which can be useful for multi-level of data storage. This resistive memory device has a large threshold voltage of ~0.5 V, good resistance ratio (R
_High
/R
_Low
) of 1.6 times 10
²
, good endurance of >1.5 times 10
⁵
cycles, and excellent retention (>11 hours) with a resistance ratio of > 1.3 times 10
²
at 150degC can be used in future nonvolatile memories.