Surface control structures for high-performance AlGaN/GaN HEMTs

Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process, an electrochemical oxidation and a multi-mesa-channel structure with relevant technologies.