Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

In this paper, experimental features of a non-classical hot-electron gate current I
_g

^e
obtained under V
_b
= 0, similar to those reported earlier under reverse V
_b
are presented. To the best of our knowledge, this is the first direct observation of this non-classical I
_g

^e
component in deep submicrometer N-channel MOSFET under conventional CHE biasing, i.e. when V
_g
ap V
_d
and V
_b
= 0. Based on the results, a phenomenological explanation as well as some further supporting experimental evidence is also presented here