A 600 Mbit/s monolithically integrated InP/InGaAs pin-JFET transimpedance receiver by planar technology

The device fabrication of a planar monolithically integrated InP/InGaAs optical transimpedance receiver is described. The device technology is based on a single-step MOVPE (metal-organic vapor-phase epitaxy) process and local doping via ion implantation. The transimpedance receiver designed for 600-Mb/s transmission systems comprises a cascode input gain stage and a source follower to provide a 50- Omega output impedance. The receiver circuit contains a p-i-n photodiode, three junction field-effect transistors, and five resistors for adjusting the transistor operating points. At a wavelength of 1300 nm, a receiver responsivity of -29 dBm has been obtained with a bit error rate of 10/sup -9/ at a data rate of 600 Mb/s NRZ (nonreturn-to-zero) signal.<
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