SiGe:C Epi Processes with Improved Robustness Against Uncontrolled Oxygen Incorporation

The availability of ultra clean MMS enables the deposition of epitaxial SiGe:C with low oxygen levels without using a purifier in the MMS gas line is discussed in this paper. This improves the robustness of epitaxial production processes. The reproducibility in gas composition of the MMS/H
₂
mixture, which circumvents the need for process re-qualification after bottle replacement, is also demonstrated