Thermal stresses in the bulk and epitaxial growth of III-V materials

Reviews dislocation generation by thermal stresses in the bulk growth of compound semiconductors. Wafer bowing by thermal stresses is analyzed in the GaAs/Si heteroepitaxial system. The quasi-steady-state (QSS) heat-transfer/thermal-stress model for glide dislocation formation during crystal growth is outlined. Next, the key predictions of the model are presented and related to crystal-growth practice. Finally, by a suitable extension of Timoshenko's treatment for the bimetallic strip, the authors determine the reduction in bowing in GaAs/Si wafers for two alternative multilayer structures.<
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