Stress Engineering in CuILow-k Interconnects by using UV-Cure of Cu Diffusion Barrier Dielectrics

In this paper, we discuss the possibility of stress engineering in the Cu/low-k interconnect reliability. We mention the film characteristics of UV cured SiCN and SiCO. A large stress change from compressive to tensile stress was observed. Through TEG demonstration, it was found that UV-cured SiCN and SiCO film make it possible to reduce SIV failure without degradation to other interconnect reliability