Molybdenum-doped indium oxide deposited by radio-frequency magnetron sputtering and pulsed laser deposition

Thin-films of molybdenum-doped indium oxide (IMO), an n-type transparent conducting oxide, were deposited using radio-frequency (RF) magnetron sputtering and pulsed laser deposition (PLD). To date, sputtered and PLD IMO films have exhibited mobilities as high as 45 and 127 cm/sup 2/V/sup -1/s/sup -1/. Temperature-dependent Hall measurements were done on both sputtered and PLD films to study scattering mechanisms. In addition, four transport coefficient measurements (conductivity, Hall, Nernst, and Seebeck coefficients) were conducted to extract the transport properties of IMO. Temperature-dependent Hall measurements on PLD and sputtered films suggest the mobility is limited by phonon and ionized impurity scattering, respectively. From the method of four coefficients, the density-of-states effective-mass value of IMO was found to increase from /spl sim/0.25m/sub e/ to /spl sim/0.4m/sub e/ as carrier concentration varied from 3.6/spl times/10/sup 19/ to 6.5/spl times/10/sup 20/cm/sup -3/.