Spice up your MOSFET modelling

A customizable and predictive BSIM model has been generated for devices with L/sub eff/ down to 12 nm and a wide range of interconnect sizes. Extensive evaluations demonstrate the validity of this approach. The main advantages of this approach over previous work are its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that are not yet available.