Some Structural Dependent Electrical Properties of Tantalum-Tantalum Oxide Thin-Film Resistors

Direct transmission electron micrographs were taken of samples of tantalum thin-film resistors. The resistors were vapor deposited in an air atmosphere at 10-5 torr. An island model was 'resumed for the eleetrical behavior of the tantalum thin-film resistors. Data taken on life tests, temperature coefficient tests, and radio-frequency tests were correlated with the observed structure as seen in a electron microscope. Both anodized and unanodized resistors were studied. An attempt to explain the differential aging observed under an alternating current with respect to the aging observed under a direct current was made.