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The introduction of impurity atoms into a surface by means of ion implantation is a well established technique in the semiconductor field. The main advantages of ion-implantation doping are its high controllability, uniformity, and reproducibility. Increasing applications, coupled with the development and availability of commercial equipment, has resulted in the use of the implantation technology in most major semiconductor processing facilities. Discussed in this review paper are: the ion-implantation process; standard ionimplantation equipment and operating parameters; and applications in device structures.