0.25 × 106bit/in2NDRO coupled film memory elements

The fabrication and operation of high-density (0.25 × 10
⁶
bit/in
²
) nondestructive readout (NDRO) memory elements are described. The high density is made possible by coupled films and Permalloy keeper. The NDRO is made possible by multiple-pulse WRITE or hard-direction bias field. Typical performance parameters are
I_{w} = 60
mA,
I_{b} = 30
mA, and
V_{s} = 150
μV/3 ns. The small signal is detectable by multiple-pulse READ. When such memory elements are to be fabricated with peripheral circuits on the same Si chip, a self-contained chip will be obtained. Such chips could enjoy the same advantages as semiconductor memory chips such as few leads, modularity, amenability to bit organization, and possibility for error-correction, but would be capable of higher storage density due to simpler planar configuration.