Uniaxial and cubic anisotropy constants in ion-implanted Sm,Tm,Ga:YIG bubble thin films

The effects of ion implantation into (SmTmY)
3
(GaFe)
5
O
12
garnet thin films have been studied by ferromagnetic resonance. He+ ions were used for implantation with doses ranging from 3 to 4 × 10
¹⁵
He+/ cm
²
and implantation energy ranging from 150 to 175 Kev. The uniaxial and cubic anisotropy constants have been studied as a function of temperature from 0°C to 100°C for both as-grown and ion-implanted films. The implantation has effectively changed an easy-axis anisotropy to that of an easy plane in the implanted layers of the films. A cubic anisotropy constant K
1
with values varying from 4 × 10
³
to 6 × 10
³
erg/cm
³
at room temperature has been observed in these films. The results also indicated that to the first order, the implanted region in the film was essentially magnetically uncoupled from the bulk of the film.