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Charge-based capacitance measurements (CBCM) on MOS devices

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3 Author(s)
Sell, Bernhard ; Infineon Technol., Dresden, Germany ; Avellan, A. ; Krautschneider, W.H.

A new simple method of measuring capacitance-voltage characteristics of MOS devices is presented. Proceeding from the charge-based capacitance measurement technique suggested recently, a compact test structure with high resolution has been developed, which only requires measurement of do quantities. The method was tested on a 0.6-μm CMOS process with small and large area capacitors and compared to well-known high-frequency capacitance-voltage results. Beside using a reference structure, a second means of extracting parasitic effects is demonstrated for small structures. The test structure allows measurements in a wide frequency range with high accuracy and low noise contribution at small capacitance levels

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Device and Materials Reliability, IEEE Transactions on  (Volume:2 ,  Issue: 1 )