A comparative study on single event irradiation effects between Trench MOSFET and Split-gate-trench MOSFET

The single event effects of conventional Trench MOSFET (T-MOS) and Split-gate-trench MOSFET (SGT-MOS) with the same breakdown voltage are compared in this paper by simulation. It is shown that the sensitive positions and failure process of single event burnout (SEB) and single event gate rupture (SEGR) are different for T-MOS and SGT-MOS. Compared with T-MOS, SGT-MOS has better anti single event effect ability.