ALD Mo for Advanced MOL Local Interconnects

This paper introduces ALD Mo as a potential replacement for W and Co as the conductor for logic MOL interconnects. 10nm ALD Mo without a liner and barrier has a very good adhesion on SiO2, SiN and SiCO dielectrics with resistivity as low as 19–22 μm.cm. We demonstrate for the 1^st time a liner/barrier less ALD Mo fill capability in high aspect ratio trenches down to 10nm CD and show that ALD Mo does not drift into SiO2 and SiCO.