Real-Time-Scale 3D Kinetic Monte Carlo Simulation for Hafnium Oxide Based RRAM in 1T1R Cell

A real-time-scale 3D Kinetic Monte Carlo (KMC) simulation method is developed for hafnium oxide (HfO
x
) based RRAM in 1T1R cell. The introduction of the series transistor enables the description of voltage division behavior in realistic RRAM operation. The simulation can well reflect the forming, set and reset process, which can be helpful for future optimization of RRAM for storage and computing applications.