A Literature Review of HEMT for Low Noise and High-Frequency Applications: Current Status and Technology Comparison

Now a day, In concern with the low noise performance and high-frequency operations, AlGaN/GaN High Electron Mobility Transistors (HEMTs) are highly required in the market instead of the MOSFET and FET. Some of the practices of HEMT are related to Radio Frequency with Cellular Telecommunications (CT), Personal Digital Assistants (PDAs), Direct transmission receivers– DBS, radio cosmology, RADAR (Radio Detection and Ranging System) and are significantly utilized in any RF plan utilized. In this survey, we have described different technologies such as Dry and wet etching, Gate Recessed enhancement method, TiN /Al gate contacts on AlGaN/GaN mechanically strain-induced P- doping, Impact on Barrier Thickness, Avalanche breakdown on surface and buffer, Discrete Field Plate, Creation of new layer Si3N4, Design and Characterization of 2-DEG, Based on material and Physical dimensions, Strain Engineering and AIN Spacer used in designing of HEMT to achieve electrical properties such as large cut-off frequency, greater breakdown voltage, best gain, more power characteristics and increase in drain current, transconductance, and temperature. Additionally, semiconductor materials have been compared for a suitable design. The performance of devices and simulation surveys are reported. At last HEMT challenges are discussed.