A Compact Model for Si/SiC IGBT Implemented in LTspice

A well-established unified physically-based compact model for IGBT has been implemented in LTspice, a notable free SPICE circuit simulator. A 12.5 kV n-channel SiC IGBT, a p-channel (13 kV) SiC IGBT, and a 1200 V/60 A field stop Si IGBT from IXYS have been used in this paper for model verification. The parameters have been extracted with ICCAP software using LTspice as an external simulator. This model combines both Si and SiC materials for n and p-channel IGBT that add to the flexibility of a circuit designer. This paper shows an LTspice implementation of a model published in [3]. It describes the MOSFET channel, internal bipolar transistor, and nonlinear capacitances to a high degree of accuracy. It also has temperature scaling capabilities, as well as a reliable yet straightforward datasheet-driven parameter extraction mechanism.